bzd27b-m series www.vishay.com vishay semiconductors rev. 1.0., 29-oct-15 1 document number: 85922 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 zener diodes with surge current specification features ? sillicon planar zener diodes ? voltage range includes 43 breakdown voltages from 3.6 v to 200 v with 2 % for bzd27b-m series ? low profile surface-mount package ? zener and surge current specification ? low leakage current ? excellent stability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? meets jesd 201 class 2 whisker test ? esd capability according to aec-q101: ? human body model: > 8 kv ? machine model: > 800 v ? wave and reflow solderable ? aec-q101 qualified ? base p/n-m3 - halogen-free, rohs-compliant, and commercial grade ? base p/n-hm3 - halogen-fr ee, rohs-compliant, and automotive grade (available on request) ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 notes (1) mounted on epoxy-glass pcb with 3 mm x 3 mm cu pads ( ? 40 m thick) (2) t j = 25 c prior to surge primary characteristics parameter value unit v z range nom. 3.6 to 200 v test current i zt 5 to 100 ma v br 7.35 to 196 v v wm 6.2 to 160 v p ppm 150 w t j max. 175 c v z specification pulse current int. construction single polarity uni-directional 17249 available ordering information device name ordering code taped units per reel minimum order quantity bzd27b-m series bzd27b3v6p-m3-08 to bzd27b200p-m3-08 3000 per 7" reel (8mm tape) 30 000/box bzd27b3v6p-m3-18 to bzd27b200p-m3-18 10 000 per 13" reel (8 mm tape) 50 000/box package package name weight molding compound flammability rating moisture sensitivity level whisker test acc. jesd 201 soldering conditions do-219ab (smf) 15 mg ul 94 v-0 msl level 1 (according j-std-020) class 2 peak temperature max. 260 c absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit power di ssipation t l = 105 c p tot 2300 mw t a = 30 c (1) p tot 800 mw non repetitive peak su rge power dissipation (2) 100 s square pulse p zsm 300 w 10/1000 s waveform p rsm 150 w junction to lead r thjl 30 k/w junction to ambient air mounted on epoxy-glass pcb with 3 mm x 3 mm cu pads ( ? 40 m thick) r thja 180 k/w junction temperature t j 175 c storage temperature range t stg -65 to +175 c operating temperature range t op -65 to +175 c
bzd27b-m series www.vishay.com vishay semiconductors rev. 1.0., 29-oct-15 2 document number: 85922 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? electrical characteristics when used as regulator diodes ?maximum v f = 1.2 v, at i f = 0.2 a (1) pulse test: t p ? 5 ms electrical characteristics (t amb = 25 c, unless otherwise specified) part number marking code zener voltage range (1) test current reverse current dynamic resistance temperature coefficient v z at i zt1 i zt1 i r at v r z z at i zt1 ? vz at i zt1 v ma a v ? %/c min. nom. max. max. typ. max. min. max. bzd27b3v6p-m 0n 3.53 3.6 3.67 100 100 1 4 8 -0.14 -0.04 bzd27b3v9p-m 1n 3.82 3.9 3.98 100 50 1 4 8 -0.14 -0.04 bzd27b4v3p-m 2n 4.21 4.3 4.39 100 25 1 4 7 -0.12 -0.02 bzd27b4v7p-m 3n 4.61 4.7 4.79 100 10 1 3 7 -0.1 0 bzd27b5v1p-m 4n 5.00 5.1 5.20 100 5 1 3 6 -0.08 0.02 bzd27b5v6p-m 5n 5.49 5.6 5.71 100 10 2 2 4 -0.04 0.04 bzd27b6v2p-m 6n 6.08 6.2 6.32 100 5 2 2 3 -0.01 0.06 bzd27b6v8p-m 7n 6.66 6.8 6.94 100 10 3 1 3 0 0.07 bzd27b7v5p-m 8n 7.35 7.5 7.65 100 50 3 1 2 0 0.07 bzd27b8v2p-m 9n 8.04 8.2 8.36 100 10 3 1 2 0.03 0.08 bzd27b9v1p-m 0o 8.92 9.1 9.28 50 10 5 2 4 0.03 0.08 bzd27b10p-m 1o 9.80 10 10.20 50 7 7.5 2 4 0.05 0.09 bzd27b11p-m 2o 10.78 11 11.22 50 4 8.2 4 7 0.05 0.1 bzd27b12p-m 3o 11.76 12 12.24 50 3 9.1 4 7 0.05 0.1 bzd27b13p-m 4o 12.74 13 13.26 50 2 10 5 10 0.05 0.1 bzd27b15p-m 5o 14.70 15 15.30 50 1 11 5 10 0.05 0.1 bzd27b16p-m 6o 15.68 16 16.32 25 1 12 6 15 0.06 0.11 bzd27b18p-m 7o 17.64 18 18.36 25 1 13 6 15 0.06 0.11 bzd27b20p-m 8o 19.60 20 20.40 25 1 15 6 15 0.06 0.11 bzd27b22p-m 9o 21.56 22 22.44 25 1 16 6 15 0.06 0.11 bzd27b24p-m 0p 23.52 24 24.48 25 1 18 7 15 0.06 0.11 bzd27b27p-m 1p 26.46 27 27.54 25 1 20 7 15 0.06 0.11 bzd27b30p-m 2p 29.40 30 30.60 25 1 22 8 15 0.06 0.11 bzd27b33p-m 3p 32.34 33 33.66 25 1 24 8 15 0.06 0.11 bzd27b36p-m 4p 35.28 36 36.72 10 1 27 21 40 0.06 0.11 BZD27B39P-M 5p 38.22 39 39.78 10 1 30 21 40 0.06 0.11 bzd27b43p-m 6p 42.14 43 43.86 10 1 33 24 45 0.07 0.12 bzd27b47p-m 7p 46.06 47 47.94 10 1 36 24 45 0.07 0.12 bzd27b51p-m 8p 49.98 51 52.02 10 1 39 25 60 0.07 0.12 bzd27b56p-m 9p 54.88 56 57.12 10 1 43 25 60 0.07 0.12 bzd27b62p-m 0q 60.76 62 63.24 10 1 47 25 80 0.08 0.13 bzd27b68p-m 1q 66.64 68 69.36 10 1 51 25 80 0.08 0.13 bzd27b75p-m 2q 73.50 75 76.50 10 1 56 30 100 0.08 0.13 bzd27b82p-m 3q 80.36 82 83.64 10 1 62 30 100 0.08 0.13 bzd27b91p-m 4q 89.18 91 92.82 5 1 68 60 200 0.08 0.13 bzd27b100p-m 5q 98.00 100 102.00 5 1 75 60 200 0.09 0.13 bzd27b110p-m 6q 107.80 110 112.20 5 1 82 80 250 0.09 0.13 bzd27b120p-m 7q 117.60 120 122.40 5 1 91 80 250 0.09 0.13 bzd27b130p-m 8q 127.40 130 132.60 5 1 100 110 300 0.09 0.13 bzd27b150p-m 9q 147.00 150 153.00 5 1 110 130 300 0.09 0.13 bzd27b160p-m 0r 156.80 160 163.20 5 1 120 150 350 0.09 0.13 bzd27b180p-m 1r 176.40 180 183.60 5 1 130 180 400 0.09 0.13 bzd27b200p-m 2r 196.00 200 204.00 5 1 150 200 500 0.09 0.13
bzd27b-m series www.vishay.com vishay semiconductors rev. 1.0., 29-oct-15 3 document number: 85922 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? electrical characteristics when used as protection diodes (1) non-repetitive peak reverse current in accordance with iec 60-1, section 8 (10/1000 s pulse); see fig. 4 electrical characteristics (t amb = 25 c, unless otherwise specified) part number marking code zener voltage range test current reverse current clamping voltage temperature coefficient v z at i zt1 i zt1 i r at v r v c at i rsm (1) ? vz at i zt1 v ma a v v a %/c min. nom. max. max. max. min. max. bzd27b7v5p-m 8n 7.35 7.5 7.65 100 1500 6.2 10.9 13.3 0 0.07 bzd27b8v2p-m 9n 8.04 8.2 8.36 100 1200 6.8 11.8 12.2 0.03 0.08 bzd27b9v1p-m 0o 8.92 9.1 9.28 50 100 7.5 12.9 11.3 0.03 0.08 bzd27b10p-m 1o 9.80 10 10.20 50 20 8.2 14.2 10.1 0.05 0.09 bzd27b11p-m 2o 10.78 11 11.22 50 5 9.1 15.2 9.6 0.05 0.1 bzd27b12p-m 3o 11.76 12 12.24 50 5 10 16 8.8 0.05 0.1 bzd27b13p-m 4o 12.74 13 13.26 50 5 11 17.8 7.9 0.05 0.1 bzd27b15p-m 5o 14.70 15 15.30 50 5 12 20.5 7.2 0.05 0.1 bzd27b16p-m 6o 15.68 16 16.32 25 5 13 21.9 6.6 0.06 0.11 bzd27b18p-m 7o 17.64 18 18.36 25 5 15 24.6 5.9 0.06 0.11 bzd27b20p-m 8o 19.60 20 20.40 25 5 16 27.3 5.3 0.06 0.11 bzd27b22p-m 9o 21.56 22 22.44 25 5 18 30 4.8 0.06 0.11 bzd27b24p-m 0p 23.52 24 24.48 25 5 20 32.3 4.4 0.06 0.11 bzd27b27p-m 1p 26.46 27 27.54 25 5 22 36.3 3.9 0.06 0.11 bzd27b30p-m 2p 29.40 30 30.60 25 5 24 40.4 3.6 0.06 0.11 bzd27b33p-m 3p 32.34 33 33.66 25 5 27 44.4 3.2 0.06 0.11 bzd27b36p-m 4p 35.28 36 36.72 10 5 30 48.4 3 0.06 0.11 BZD27B39P-M 5p 38.22 39 39.78 10 5 33 52.5 2.8 0.06 0.11 bzd27b43p-m 6p 42.14 43 43.86 10 5 36 57.9 2.5 0.07 0.12 bzd27b47p-m 7p 46.06 47 47.94 10 5 39 62.8 2.3 0.07 0.12 bzd27b51p-m 8p 49.98 51 52.02 10 5 43 68.2 2.1 0.07 0.12 bzd27b56p-m 9p 54.88 56 57.12 10 5 47 74.8 1.9 0.07 0.12 bzd27b62p-m 0q 60.76 62 63.24 10 5 51 82.9 1.7 0.08 0.13 bzd27b68p-m 1q 66.64 68 69.36 10 5 56 90.9 1.6 0.08 0.13 bzd27b75p-m 2q 73.50 75 76.50 10 5 62 100.2 1.5 0.08 0.13 bzd27b82p-m 3q 80.36 82 83.64 10 5 68 110 1.3 0.08 0.13 bzd27b91p-m 4q 89.18 91 92.82 5 5 75 122 1.2 0.09 0.13 bzd27b100p-m 5q 98.00 100 102.00 5 5 82 134 1.1 0.09 0.13 bzd27b110p-m 6q 107.80 110 112.20 5 5 91 145 1 0.09 0.13 bzd27b120p-m 7q 117.60 120 122.40 5 5 100 161 0.9 0.09 0.13 bzd27b130p-m 8q 127.40 130 132.60 5 5 110 174 0.81 0.09 0.13 bzd27b150p-m 9q 147.00 150 153.00 5 5 120 201 0.73 0.09 0.13 bzd27b160p-m 0r 156.80 160 163.20 5 5 130 214 0.67 0.09 0.13 bzd27b180p-m 1r 176.40 180 183.60 5 5 150 242 0.6 0.09 0.13 bzd27b200p-m 2r 196.00 200 204.00 5 5 160 268 0.54 0.09 0.13
bzd27b-m series www.vishay.com vishay semiconductors rev. 1.0., 29-oct-15 4 document number: 85922 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward current v s. forward voltage fig. 2 - typ. diode capacitance v s. re v erse voltage fig. 3 - power dissipation v s. am b ient temperature fig. 4 - non-repetiti v e peak re v erse current pulse definition 0.1 1 10 0.6 0.8 1.0 1.2 1.4 1.6 17411 i f - for w ard c u rrent (a) v f - for w ard v oltage ( v ) max. v f ty p. v f 10 100 1000 10 000 0 0.5 1.0 1.5 2.0 2.5 3.0 22806 c d - typ. j u nction capacitance (pf) v r - reverse v oltage ( v ) b5 v 1p b6 v 8p b12p b27p b51p b200p b18p 0 1.0 0.5 1.5 2.5 2.0 3.0 0 25 50 75 100 125 150 175 22774 p tot - total po w er dissipation (w) t amb - ambient temperat u re (c) r thjl = 30k/w r thja = 180k/w 17415 t i rsm (%) 100 90 50 10 t 1 t 1 = 10 s t 2 = 1000 s t 2
bzd27b-m series www.vishay.com vishay semiconductors rev. 1.0., 29-oct-15 5 document number: 85922 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): do-219ab (smf) foot print re commendation: rev. 3 - date: 13. march 2007 doc u ment no.:s8- v -3915.01-001 (4) 1.3 (0.051) 1.3 (0.051) 2.9 (0.114) 1.4 (0.055) 2.9 (0.114) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) 0.85 (0.033) 0.35 (0.014) 1.2 (0.047) 0.8 (0.031) 1.9 (0.075) 1.7 (0.067) 1.08 (0.043) 0.88 (0.035) 0.25 (0.010) 0.1(0.003) 0.1 (0.004) 0 (0.000) 5 5 created - date: 15. febr u ary 2005 17247 detail z enlarged
bzd27b-m series www.vishay.com vishay semiconductors rev. 1.0., 29-oct-15 6 document number: 85922 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 blistertape dimensions for smf in millimeters 18513 ps doc u ment- n o.: s8- v -3717.02-001 (3)
bzd27b-m series www.vishay.com vishay semiconductors rev. 1.0., 29-oct-15 7 document number: 85922 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 orientation in carrier tape - smf smf top view cathode unreeling direction 22670 document no.: s8-v-3717.02-003 (4) created - date: 09. feb. 2010
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